The nature of electrical interaction of Schottky contacts-Reference-Cited by-同舟云学术

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The nature of electrical interaction of Schottky contacts

Published:2011-08 Issue:8 Volume:45 Page:1009-1025
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Torkhov N. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782611080227.pdf

Reference16 articles.

1. N. A. Torkhov, Dep. VINITI No. 334-D2008 from 18.04.2008.

2. N. A. Torkhov, V. G. Bozhkov, I. V. Ivonin, and V. A. Novikov, Poverkhnost’, No. 11, 1 (2009) [J. Surf. Invest. 3, 888 (2009)].

3. N. A. Torkhov and V. A. Novikov, Fiz. Tekh. Poluprovodn. 45, 70 (2011) [Semiconductors 45, 69 (2011)].

4. N. A. Torkhov, Fiz. Tekh. Poluprovodn. 44, 615 (2010) [Semiconductors 44, 590 (2010)].

5. N. A. Torkhov, Fiz. Tekh. Poluprovodn. 44, 767 (2010) [Semiconductors 44, 737 (2010)].

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An experimental study: Dependence of Schottky diode parameters on Schottky contact area size;Optical Materials;2023-08

2. Impact of the Periphery Electrostatic Field on the Photovoltaic Effect in Metal–Semiconductor Contacts with a Schottky Barrier;Semiconductors;2018-09-06

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