Silicon ion implantation for growing structurally perfect silicon layers on sapphire-Reference-Cited by-同舟云学术

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Silicon ion implantation for growing structurally perfect silicon layers on sapphire

Published:2011-12 Issue:12 Volume:45 Page:1600-1603
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Vorotyntsev V. M.,Shobolov E. L.,Gerasimov V. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782611120153.pdf

Reference8 articles.

1. T. Nakamura, H. Matsuhashi, and Y. Nagatomo, Oki Tech. Rev. 71(4), 66 (2004).

2. M. E. Twigg and E. D. Richmond, J. Appl. Phys. 64, 3037 (1988).

3. A. S. Adonin, Elektron. Komp. 3, 40 (2000).

4. M. L. Burgener and R. E. Reedy, US Patent No. 5416043 (1995).

5. T. Nakamura, H. Kobayashi, T. Takahashi, and T. Inada, Nucl. Instrum. Methods Phys. Res. 7, 275 (1985).

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Application of ion implantation for the modification of silicon-on-sapphire epitaxial systems, their structure, and properties;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2017-07

2. On the generation of charge-carrier recombination centers in the sapphire substrates of silicon-on-sapphire structures;Semiconductors;2015-08

3. Defect formation and recrystallization mechanisms in silicon-on-sapphire films under ion irradiation;Semiconductors;2014-04

4. Recrystallization of silicon-on-sapphire structures at various amorphization-ion-beam energies;Semiconductors;2013-02

5. Fabrication of ultrafine silicon layers on sapphire;Technical Physics Letters;2012-10

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