X-Ray Diffraction Analysis of Features of the Crystal Structure of GaN/Al0.32Ga0.68N HEMT-Heterostructures by the Williamson

X-Ray Diffraction Analysis of Features of the Crystal Structure of GaN/Al0.32Ga0.68N HEMT-Heterostructures by the Williamson–Hall Method

Published:2018-05-15 Issue:6 Volume:52 Page:734-738
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Pushkarev S. S.,Grekhov M. M.,Zenchenko N. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782618060209.pdf

Reference10 articles.

1. K. N. Tomosh, A. Yu. Pavlov, V. Yu. Pavlov, R. A. Khabibullin, S. S. Arutyunyan, and P. P. Maltsev, Semiconductors 50, 1416 (2016).

2. D. N. Slapovskii, A. Yu. Pavlov, V. Yu. Pavlov, and A. V. Klekovkin, Semiconductors 51, 438 (2017).

3. V. V. Gruzdov, Yu. V. Kolkovskii, and Yu. A. Kontsevoi, Control of New Technologies in Solid-State Microwave Electronics (Tekhnosfera, Moscow, 2016) [in Russian].

4. R. N. Kyutt and A. A. Dyshekov, Tech. Phys. Lett. 37, 306 (2011).

5. G. K. Williamson and W. H. Hall, Acta Metall. 1, 22 (1953).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Determination of hydrogen influence on microhardness and microstructure characteristics of aviation alloys;Izvestiya. Ferrous Metallurgy;2024-06-16

2. Preparation of GaN/Porous silicon heterojunction photodetector by laser deposition technique;Scientific Reports;2023-09-07

3. Характеристика наноструктурованих включень In6Se7 у шаруватих кристалах α-In2Se3 аналітичними методами рентгенівської дифрактометрії;Ukrainian Journal of Physics;2022-12-21