Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission-Reference-Cited by-同舟云学术

Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission

Published:2019-09 Issue:9 Volume:53 Page:1234-1237
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Shastin V. N.,Zhukavin R. Kh.,Kovalevsky K. A.,Tsyplenkov V. V.,Rumyantsev V. V.,Shengurov D. V.,Pavlov S. G.,Shuman V. B.,Portsel L. M.,Lodygin A. N.,Astrov Yu. A.,Abrosimov N. V.,Klopf J. M.,Hübers H.-W.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782619090197.pdf

Reference7 articles.

1. S. G. Pavlov, R. Kh. Zhukavin, V. N. Shastin, and H.-W. Hübers, Phys. Status Solidi B 250, 9 (2013).

2. H. G. Grimmeiss, E. Janzén, and K. Larsson, Phys. Rev. B 25, 2627 (1982).

3. L. T. Ho and A. K. Ramdas, Phys. Rev. B 5, 462 (1972).

4. A. K. Ramdas and S. Rodriguez, Rep. Prog. Phys. 44, 1297 (1981).

5. Yu. A. Astrov, V. B. Shuman, L. M. Portsel, N. A. Lodygin, S. G. Pavlov, N. V. Abrosimov, V. N. Shastin, and H.-W. Hübers, Phys. Status Solidi A 214, 1700192 (2017).

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