Photoelectric properties of photodiodes based on InAs/InAsSbP heterostructures with photosensitive-area diameters of 0.1

Photoelectric properties of photodiodes based on InAs/InAsSbP heterostructures with photosensitive-area diameters of 0.1–2.0 mm

Published:2015-12 Issue:12 Volume:49 Page:1671-1677
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Andreev I. A.,Serebrennikova O. Yu.,Il’inskaya N. D.,Pivovarova A. A.,Konovalov G. G.,Kunitsyna E. V.,Sherstnev V. V.,Yakovlev Yu. P.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782615120027.pdf

Reference9 articles.

1. E. V. Stepanov, Diode Laser Spectroscopy and Molecular Analysis of Biomarkers (Fizmatlit, Moscow, 2009) [in Russian].

2. K. Kincade, Laser Focus World 12, 69 2003.

3. M. P. Mikhailova, N. D. Stoyanov, I. A. Andreev, B. Zhurtanov, S. S. Kizhaev, E. V. Kunitsyna, K. Salikhov, and Yu. P. Yakovlev, Proc. SPIE 6585, 658526–1 (2007).

4. T. L. Troy and S. N. Thennadil, J. Biomed. Opt. 6, 167 2001.

5. I. A. Andreev, S. S. Kizhaev, S. S. Molchanov, N. D. Stoyanov, and Yu. P. Yakovlev, in Proceedings of the 6th International Conference on the Mid-Infrared Optoelectronics: Materials and Devices (MIOMD), St. Petersburg, Russia, June 28–July 1, 2004, p. 70.

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