Specific features of amorphous silicon layers grown by plasma-enhanced chemical vapor deposition with tetrafluorosilane-Reference-Cited by-同舟云学术

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Specific features of amorphous silicon layers grown by plasma-enhanced chemical vapor deposition with tetrafluorosilane

Published:2011-03 Issue:3 Volume:45 Page:302-305
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Vainshtein J. S.,Kon’kov O. I.,Kukin A. V.,El’tsina O. S.,Belyakov L. V.,Terukov E. I.,Sreseli O. M.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782611030225.pdf

Reference10 articles.

1. A. G. Gullis, L. T. Canham, and P. D. J. Calcott, J. Appl. Phys. 82, 909 (1997).

2. S. V. Chernyshov, E. I. Terukov, V. A. Vassilyev, and A. S. Volkov, J. Non.-Cryst. Solid 134, 218 (1991).

3. A. Hadded-Adel, T. Inokuma, Y. Kurata, and S. Hasegava, Surf. Sci. 601, 1429 (2007).

4. T. Nagahara, K. Fujimoto, N. Kohno, K. Kashiwagi, and H. Kakinoki, Jpn. J. Appl. Phys. 31, 4555 (1992).

5. M. Lozurdo, M. M. Giangregorio, A. Sacchetti, P. Capezzuto, G. Bruno, J. Càrabe, J. J. Ganda, and L. Urbina, J. Non.-Cryst. Solid 352, 906 (2006).

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