Infrared (850 nm) Light-Emitting Diodes with Multiple InGaAs Quantum Wells and “Back” Reflector-Reference-Cited by-同舟云学术

Infrared (850 nm) Light-Emitting Diodes with Multiple InGaAs Quantum Wells and “Back” Reflector

Published:2021-08 Issue:8 Volume:55 Page:686-690
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Malevskaya A. V.,Kalyuzhnyy N. A.,Malevskii D. A.,Mintairov S. A.,Nadtochiy A. M.,Nakhimovich M. V.,Soldatenkov F. Y.,Shvarts M. Z.,Andreev V. M.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1134/S1063782621080121.pdf

Reference7 articles.

1. Zh. I. Alferov, V. M. Andreev, D. Z. Garbuzov, N. Yu. Davidyuk, B. V. Egorov, B. V. Pushnyi, and L. T. Chichua, Sov. Phys. Semicond. 12, 475 (1978).

2. U. Bekirev, S. Babenko, V. Kryukov, B. Potapov, and A. Skiper, Elektron. NTB 00137, 137 (2014).

3. Inst. Semicond. Devices. https://www.niipp.ru/.

4. S. Ilelek, A. Plossol, K. Streubel, W. Wegleiter, and R. Wirth, US Patent No. 2006/0180820 A1 (2006).

5. https://www.epistar.com/EpistarEn/prodInfo.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of Power IR (850 nm) Light-Emitting Diodes Manufacturing by Lift-Off Technique of AlGaAs–GaAs-Heterostructure to Carrier-Substrate;Technical Physics;2023-12

2. High Efficiency (EQE = 37.5%) Infrared (850 nm) Light-Emitting Diodes with Bragg and Mirror Reflectors;Semiconductors;2023-05

3. Low Temperature Pd/Ge/Au Ohmic Contact for High-Power Algaas/Gaas Photovoltaic Converters;2023