Influence of the ionization-energy losses of high-energy bismuth ions on the development of helium blisters in silicon-Reference-Cited by-同舟云学术

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Influence of the ionization-energy losses of high-energy bismuth ions on the development of helium blisters in silicon

Published:2015-10 Issue:10 Volume:49 Page:1290-1293
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Reutov V. F.,Dmitriev S. N.,Sohatsky A. S.,Zaluzhnyi A. G.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S106378261510022X.pdf

Reference9 articles.

1. A. G. Zaluzhnyi, Yu. N. Sokurskii, and V. N. Tebus, Helium in Reactor Materials (Energoatomizdat, Moscow, 1988), p. 224 [in Russian].

2. V. F. Reutov, Sh. Sh. Ibragimov, O. P. Maksimkin, et al., Sov. Tech. Phys. 30, 113 (1985).

3. V. F. Reutov, V. F. Chkuaseli, and G. T. Zhdan, Fiz. Met. Metalloved. 63, 915 (1987).

4. V. F. Reutov and Sh. Sh. Ibragimov, USSR Inventor’s Certificate No. 1282757 (1983).

5. M. Bruel, US Patent No. 5374564 (1995).

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