Polydisalicylidene azomethyne/Si(GaAs) heterojunctions: Development and properties-Reference-Cited by-同舟云学术

Polydisalicylidene azomethyne/Si(GaAs) heterojunctions: Development and properties

Published:2010-03 Issue:3 Volume:44 Page:354-358
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Nikolaev Yu. A.,Rud’ V. Yu.,Rud’ Yu. V.,Terukov E. I.,Heller N. M.,Ivanov A. G.,Shamanin V. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782610030140.pdf

Reference9 articles.

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3. N. V. Blinova, E. L. Krasnopeeva, Yu. A. Nikolaev, A. Yu. Osadchev, V. Yu. Rud’, Yu. V. Rud’, E. I. Terukov, and V. V. Shamanin, Fiz. Tekh. Poluprovodn. 37, 53 (2003) [Semiconductors 37, 53 (2003)].

4. G. A. Il’chuk, N. V. Klimova, O. I. Kon’kov, S. E. Nikitin, Yu. A. Nikolaev, L. I. Rudaya, V. Yu. Rud’, Yu. V. Rud’, E. I. Terukov, T. A. Yurre, and V. V. Shamanin, Fiz. Tekh. Poluprovodn. 38, 1056 (2004) [Semiconductors 38, 1018 (2004)].

5. E. L. Aleksandrova, A. G. Ivanov, N. M. Geller, L. B. Nadezhdina, and V. V. Shamanin, Fiz. Tekh. Poluprovodn. 42, 1367 (2008) [Semiconductors 42, 1338 (2008)].

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