Photoluminescence properties of thallium-containing GeSe2 and GeSe3 vitreous semiconductors-Reference-Cited by-同舟云学术

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Photoluminescence properties of thallium-containing GeSe2 and GeSe3 vitreous semiconductors

Published:2016-02 Issue:2 Volume:50 Page:158-161
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Babaev A. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782616020044.pdf

Reference27 articles.

1. B. T. Kolomiets and T. F. Nazarova, Sov. Phys. Solid State 2, 26 (1959).

2. B. T. Kolomiets, in Proceedings of the 6th International Conference on Amorphous and Liquid Semiconductors (Leningrad, 1975), p. 23.

3. B. T. Kolomiets, Phys. Status Solidi 7, 359 (1964).

4. V. L. Vaninov and S. K. Novoselov, Fiz. Khim. Stekla 2, 546 (1976).

5. T. Ishikawa, M. Ritao, N. Akao, and S. Yamada, Phys. Status Solidi 57, 373 (1980).

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