Effect of carbon monoxide on the capacitance-voltage characteristics of Pd-SiO2-Si MOS diodes-Reference-Cited by-同舟云学术

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Effect of carbon monoxide on the capacitance-voltage characteristics of Pd-SiO2-Si MOS diodes

Published:2009-06 Issue:6 Volume:43 Page:751-755
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Kalygina V. M.,Gricyk V. Ju.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782609060128.pdf

Reference18 articles.

1. A. Salomonsson, M. Eriksson, and H. Dannetun, J. Appl. Phys. 98, 014505 (2005).

2. V. I. Balyuba, V. Yu. Gritsyk, T. A. Davydova, V. M. Kalygina, S. S. Nazarov, A. V. Panin, and L. S. Khludkova, Fiz. Tekh. Poluprovodn. 40, 1470 (2006) [Semiconductors 40, 1436 (2006)].

3. V. I. Balyuba, V. Yu. Gritsyk, T. A. Davydova, V. M. Kalygina, S. S. Nazarov, and L. S. Khludkova, Fiz. Tekh. Poluprovodn. 39, 285 (2005) [Semiconductors 39, 269 (2005)].

4. V. I. Gaman, M. O. Duchenko, and V. M. Kalygina, Izv. Vyssh. Uchebn. Zaved., Ser. Fiz., No. 1, 67 (1998).

5. V. I. Gaman, V. I. Balyuba, T. A. Davydova, V. Yu. Gritsyk, V. M. Kalygina, and L. S. Khludkova, Izv. Vyssh. Uchebn. Zaved., Ser. Fiz., No. 11, 3 (2001).

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