On Estimates of the Electron Affinity of Silicon-Carbide Polytypes and the Band Offsets in Heterojunctions Based on These Polytypes-Reference-Cited by-同舟云学术

On Estimates of the Electron Affinity of Silicon-Carbide Polytypes and the Band Offsets in Heterojunctions Based on These Polytypes

Published:2019-05 Issue:5 Volume:53 Page:699-702
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Davydov S. Yu.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S106378261905004X.pdf

Reference33 articles.

1. Silicon Carbide: Recent Major Advances, Ed. by W. J. Choyke, H. Matsunami, and G. Pensl (Springer, Berlin, Heidelberg, 2004). http://www.springer.de.

2. Advances in Silicon Carbide. Processing and Applications, Ed. by S. E. Saddow, and A. Agarwal (Artech House, Boston, London, 2004). www.artechhouse.com.

3. A. A. Lebedev, Semicond. Sci. Technol. 21, R17 (2006).

4. H. Hibino, H. Kagoshima, and M. Nagase, J. Phys. D: Appl. Phys. 42, 374005 (2010).

5. F. Bechstedt and R. Enderlein, Semiconductor Surfaces and Interfaces (Akademie, Berlin, 1988).

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