Lateral photoconductivity of Ge/Si heterostructures with Ge quantum dots-Reference-Cited by-同舟云学术

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Lateral photoconductivity of Ge/Si heterostructures with Ge quantum dots

Published:2007-08 Issue:8 Volume:41 Page:935-938
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Kondratenko S. V.,Nikolenko A. S.,Vakulenko O. V.,Golovinskiy S. L.,Kozyrev Yu. N.,Rubezhanskaya M. Yu.,Vodyanitsky A. I.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782607080131.pdf

Reference16 articles.

1. A. Carbone, R. Introzzi, and H. C. Liu, Appl. Phys. Lett. 82, 9242 (2003).

2. M. Ershov, H. C. Liu, M. Buchanan, et al., Appl. Phys. Lett. 70, 414 (1997).

3. T. Fromherz, P. Kruck, M. Helm, et al., Appl. Phys. Lett. 68, 3611 (1996).

4. T. Brunhes, P. Boucaud, S. Sauvage, et al., Appl. Phys. Lett. 77, 3224 (2000).

5. C. Meisner, O. Röthig, K. Brunner, and G. Abstreiter, Appl. Phys. Lett. 76, 1027 (2000).

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantum Size Effects in Multilayer Si-Ge Epitaxial Heterostructures;Nanomaterials and Supramolecular Structures;2009

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