1. H. Markoc, S. Strite, G. Gao, M. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76, 1363 (1994).
2. M. Levinshteın, S. Rumyantsev, and M. S. Shur, Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe (Wiley-Interscience, New York, 2001).
3. A. Khan, K. Balakrishnan, and T. Katona, Nat. Photon. 2, 77 (2008).
4. Z. Zhang, M. Kushimoto, T. Sakai, N. Sugiyama, L. Schowalter, C. Sasaoka, and H. Amano, Appl. Phys. Express 12, 77 (2019).
5. S. Bishop, J. Hadden, F. Alzahrani, R. Hekmati, D. Huffaker, W. Langbein, and A. Bennett, ACS Photon. 7, 1636 (2020).