Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors: Role of the random potential-Reference-Cited by-同舟云学术

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Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors: Role of the random potential

Published:2017-12 Issue:12 Volume:51 Page:1562-1570
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Bovkun L. S.,Ikonnikov A. V.,Aleshkin V. Ya.,Krishtopenko S. S.,Antonov A. V.,Spirin K. E.,Mikhailov N. N.,Dvoretsky S. A.,Gavrilenko V. I.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1134/S106378261712003X/fulltext.html

Reference51 articles.

1. B. A. Bernevig, T. L. Hughes, and S.-C. Zhang, Science 314 (5806), 1757 (2006).

2. Z. D. Kvon, E. B. Olshanetsky, D. A. Kozlov, N. N. Mikhailov, and S. A. Dvoretskii, JETP Lett. 87, 502 (2008).

3. A. V. Ikonnikov, A. A. Lastovkin, K. E. Spirin, M. S. Zholudev, V. V. Rumyantsev, K. V. Maremyanin, A. V. Antonov, V. Ya. Aleshkin, V. I. Gavrilenko, S. A. Dvoretskii, N. N. Mikhailov, Yu. G. Sadofyev, and N. Samal, JETP Lett. 92, 756 (2010).

4. X. C. Zhang, K. Ortner, A. Pfeuffer-Jeschke, C. R. Becker, and G. Landwehr, Phys. Rev. B 69, 115340 (2004).

5. M. V. Yakunin, S. M. Podgornykh, N. N. Mikhailov, and S. A. Dvoretsky, Phys. E: Low-Dim. Syst. Nanostruct. 42, 948 (2010).

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