Optimization of the Parameters of PbSB-based Polycrystalline Photoresistors-Reference-Cited by-同舟云学术

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Optimization of the Parameters of PbSB-based Polycrystalline Photoresistors

Published:2018-02 Issue:2 Volume:52 Page:231-235
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Miroshnikov B. N.,Miroshnikova I. N.,Popov A. I.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1134/S1063782618020082/fulltext.html

Reference11 articles.

1. Yu. I. Ravich, V. A. Efimova, and I. A. Smirnov, Investigation Methods of Semiconductors in Application to Plumbum Halcogenids PbTe, PbSe and PbS (Nauka, Moscow, 1968) [in Russian].

2. T. S. Moss, Proc. Phys. Soc. London B 66, 993 (1953).

3. N. S. Baryshev and I. S. Aver’yanov, Sov. Phys. Solid State 4, 1120 (1962).

4. N. S. Baryshev, Properties and Application of Narrow- Gap Semiconductors (UNIPRESS, Kazan’, 2000) [in Russian].

5. R. L. Petritz, Phys. Rev. 104, 1508 (1956).

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