Admittance and nonlinear capacitance of a multilayer metal-semiconductor structure-Reference-Cited by-同舟云学术

Admittance and nonlinear capacitance of a multilayer metal-semiconductor structure

Published:2008-07 Issue:7 Volume:42 Page:783-787
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Vostokov N. V.,Shashkin V. I.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782608070063.pdf

Reference7 articles.

1. T. Noda, T. Mano, and N. Kogushi, Appl. Surf. Sci. 252, 5408 (2006).

2. N. V. Vostokov, S. A. Gusev, V. M. Danil’tsev, et al., Fiz. Tekh. Poluprovodn. 39, 92 (2005) [Semiconductors 39, 92 (2005)].

3. V. I. Shashkin, B. N. Zvonkov, N. V. Vostokov, et al., in Booklet of Extended Abstracts of 11th European Workshop on Metalorganic Vapour Phase Epitaxy (Switzerland, Lausanne, 2005) p. 119.

4. N. V. Vostokov, V. M. Danil’tsev, Yu. N. Drozdov, et al., Pis’ma Zh. Tekh. Fiz. 33(10), 83 (2007) [Tech. Phys. Lett. 33, 444 (2007)].

5. A. Rydberg, H. Gronqvist, and E. L. Kollberg, IEEE Trans. Electron. Dev. 11, 373 (1990).

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