Effect of the buffer layer of GaSe intrinsic oxide with nanometer thickness on electrical, photoelectric, and emissive properties of ITO-GaSe heterostructures-Reference-Cited by-同舟云学术

Effect of the buffer layer of GaSe intrinsic oxide with nanometer thickness on electrical, photoelectric, and emissive properties of ITO-GaSe heterostructures

Published:2007-03 Issue:3 Volume:41 Page:301-306
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Drapak S. I.,Kovalyuk Z. D.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782607030128.pdf

Reference22 articles.

1. S. I. Drapak and Z. D. Kovalyuk, Pis’ma Zh. Tekh. Fiz. 27(18), 1 (2001) [Tech. Phys. Lett. 27, 755 (2001).

2. V. A. Manasson, Z. D. Kovalyuk, S. I. Drapak, and V. N. Katerinchuk, Electron. Lett. 26, 664 (1990).

3. A. G. Kyazym-Zade, R. N. Mekhtieva, and A. A. Akhmedov, Fiz. Tekh. Poluprovodn. (Leningrad) 25, 1392 (1991) [Sov. Phys. Semicond. 25, 840 (1991)].

4. S. I. Drapak, M. O. Vorobets, and Z. D. Kovalyuk, Fiz. Tekh. Poluprovodn. (St. Petersburg) 39, 633 (2005) [Semiconductors 39, 600 (2005)].

5. S. I. Drapak and M. O. Vorobets, Ukr. Fiz. Zh. 51(1), 39 (2006).

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural and optical properties of a layered ε-GaSe thin film under elastic deformation from flexible PET substrate;Micro and Nanostructures;2022-03

2. Electroluminescence of p-GaSe〈REE〉 Single Crystals;Inorganic Materials;2019-04

3. Structure, optical, and luminescent properties of GaSe nanoparticles;Nanotechnologies in Russia;2015-09

4. Composite Nanostructures Based on a Layered Semiconductor with Nanoscale 3D Ferroelectric Inclusions (p-GaSe Intercalated by KNO3);Sensor Letters;2013-08-01

5. Surface morphology and electrical properties of Au/Ni/〈C〉/n-Ga2O3/p-GaSe〈KNO3〉 hybrid structures fabricated on the basis of a layered semiconductor with nanoscale ferroelectric inclusions;Semiconductors;2012-03