1. I. V. Grekhov and G. A. Mesyats, Phys. Usp. 48, 703 (2005).
2. I. V. Grekhov and V. M. Tuchkevich, New Principles of High Power Switching by Semiconductor Devices (Nauka, Leningrad, 1988) [in Russian].
3. Chap. 9;A. F. Kardo-Sysoev,2001
4. I. V. Grekhov, V. M. Efanov, A. F. Kardo-Sysoev, and S. V. Shenderei, Sov. Tech. Phys. Lett. 9, 188 (1983).
5. S. I. Zienko, Prib. Tekh. Eksp. 27 (4), 100 (1984).