Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg1 –xCdxTe Layers-Reference-Cited by-同舟云学术

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Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg1 –xCdxTe Layers

Published:2018-10-18 Issue:11 Volume:52 Page:1369-1374
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Kozlov D. V.,Rumyantsev V. V.,Morozov S. V.,Kadykov A. M.,Fadeev M. A.,Hübers H.-W.,Gavrilenko V. I.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782618110131.pdf

Reference11 articles.

1. W. Scott, E. L. Stelzer, and R. J. Hager, J. Appl. Phys. 47, 1408 (1976).

2. V. V. Rumyantsev, D. V. Kozlov, S. V. Morozov, M. A. Fadeev, A. M. Kadykov, F. Teppe, V. S. Varavin, M. V. Yakushev, N. N. Mikhailov, S. A. Dvoretskii, and V. I. Gavrilenko, Semicond. Sci. Technol. 32, 095007 (2017).

3. D. L. Polla, R. L. Aggarwal, J. A. Mroczkowski, J. F. Shanley, and M. B. Reine, Appl. Phys. Lett. 40, 338 (1982).

4. D. L. Polla, R. L. Aggarwal, D. A. Nelson, J. F. Shanley, and M. B. Reine, Appl. Phys. Lett. 43, 941 (1983).

5. D. L. Polla and R. L. Aggarwal, Appl. Phys. Lett. 44, 775 (1984).

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