Native oxide emerging of the cleavage surface of gallium selenide due to prolonged storage-Reference-Cited by-同舟云学术

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Native oxide emerging of the cleavage surface of gallium selenide due to prolonged storage

Published:2008-04 Issue:4 Volume:42 Page:414-421
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Drapak S. I.,Gavrylyuk S. V.,Kovalyuk Z. D.,Lytvyn O. S.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782608040088.pdf

Reference34 articles.

1. S. I. Drapak and Z. D. Kovalyuk, Pis’ma Zh. Tekh. Fiz. 27(18), 1 (2001) [Tech. Phys. Lett. 27, 755 (2001)].

2. V. A. Manasson, Z. D. Kovalyuk, S. I. Drapak, and V. N. Katerinchuk, Electron. Lett. 26, 664 (1990).

3. A. G. Kazym-Zade, R. N. Makhtieva, and A. A. Akhmedov, Fiz. Tekh. Poluprovodn. 25, 1392 (1991) [Sov. Phys. Semicond. 25, 840 (1991)].

4. S. I. Drapak and Z. D. Kovalyuk, Fiz. Tekh. Poluprovodn. 41, 312 (2007) [Semiconductors 41, 301 (2007)].

5. M. Cote, M. L. Cohen, and D. J. Chadi, Phys. Rev. B 58, R4277 (1998).

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