Current flow through metal shunts in ohmic contacts to n +-Si-Reference-Cited by-同舟云学术

Current flow through metal shunts in ohmic contacts to n +-Si

Published:2014-04 Issue:4 Volume:48 Page:492-496
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Sachenko A. V.,Belyaev A. E.,Pilipenko V. A.,Petlitskaya T. V.,Anischik V. A.,Boltovets N. S.,Konakova R. V.,Kudryk Ya. Ya.,Vinogradov A. O.,Sheremet V. N.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782614040241.pdf

Reference15 articles.

1. S. M. Sze and K. Ng Kwok, Physics of Semiconductor Devices, 3rd ed. (Wiley, 2007), ch. 3, pp. 134–196.

2. T. V. Blank and Yu. A. Goldberg, Semiconductors 41, 1263 (2007).

3. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts (Clarendon Press, Oxford, 1988), ch. 3, p. 89.

4. V. I. Strikha, Theoretical Bases of the Work of Metal-Semiconductor Contact (Naukova Dumka, Kiev, 1974) [in Russian].

5. L. D. Buiko, V. P. Lesnikova, V. A. Pilipenko, and V. V. Rozhkov, Elektron. Tekh., Ser. 6: Mater. 2, 16 (1984).

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