Structure and Electrical Properties of Zirconium-Doped Tin-Oxide Films-Reference-Cited by-同舟云学术

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Structure and Electrical Properties of Zirconium-Doped Tin-Oxide Films

Published:2018-08-22 Issue:9 Volume:52 Page:1118-1122
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Sitnikov A. V.,Zhilova O. V.,Babkina I. V.,Makagonov V. A.,Kalinin Yu. E.,Remizova O. I.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S106378261809018X.pdf

Reference15 articles.

1. A. Goetzberger and C. Hebling, Sol. Energy Mater. Sol. Cells 62, 1 (2000).

2. P. Nelli, G. Faglia, G. Sverbeglieri, E. Cereda, G. Garbetta, A. Dieguez, A. R. Rodriguez, and J. R. Morante, Thin Solid Films 371, 249 (2000).

3. L. S. Parshina, O. D. Khramova, O. A. Novodvorsky, A. A. Lotin, I. A. Petukhov, F. N. Putilin, and K. D. Shcherbachev, Semiconductors 51, 407 (2017).

4. K. P. Bogdanov, D. Ts. Dimitrov, O. F. Lutskaya, and Yu. M. Tairov, Semiconductors 32, 1033 (1998).

5. S. Monredon, A. Cellot, F. Ribot, C. Sanchez, L. Armelao, L. Gueneau, and L. Delattre, J. Mater. Chem. 12, 2396 (2002).

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1. On the Material of a Sensing Element Based on Tin Dioxide for a Gas Sensor;Nanobiotechnology Reports;2023-12

2. Dielectric and impedance spectroscopic analysis of Sn1−xZrxO2 ferromagnetically-like behavior semiconductors;Journal of Magnetism and Magnetic Materials;2021-11

3. Application of Ion-Beam Treatment in the Process of the Magnetron Deposition of Thin SnO2 Films;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2019-11

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