Quantum corrections to threshold voltages for fully depleted SOI transistors with two independent gates-Reference-Cited by-同舟云学术

Quantum corrections to threshold voltages for fully depleted SOI transistors with two independent gates

Published:2014-10 Issue:10 Volume:48 Page:1312-1317
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Popov V. P.,Ilnitsky M. A.,Naumova O. V.,Nazarov A. N.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782614100248.pdf

Reference23 articles.

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3. S. Suzuki, K. Ishii, S. Kanemaru, T. Maeda, T. Tsutsumi, T. Sekiwaga, K. Nagai, and H. Hiroshima, IEEE Trans. Electron. Dev. 47, 354 (2000).

4. V. A. Gritsenko, I. E. Tyschenko, V. P. Popov, and T. V. Perevalov, Dielectrics in Nanoelectronics, Ed. by A. L. Aseev (Sib. Otdel. Ross. Akad. Nauk, Novosibirsk, 2010) [in Russian].

5. I. J. Yang, K. Vieri, A. Chandrakasan, and D. A. Antoniadis, IEDM Tech. Digest, 877 (1995).

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