Temperature and magnetic-field dependences of the thermoelectric power of electronic indium antimonide-Reference-Cited by-同舟云学术

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Temperature and magnetic-field dependences of the thermoelectric power of electronic indium antimonide

Published:2014-08-31 Issue:9 Volume:48 Page:1139-1140
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Gadjialiev M. M.,Pirmagomedov Z. Sh.,Efendieva T. N.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782614090085.pdf

Reference6 articles.

1. B. M. Askerov, Electron Transport Phenomena in Semiconductors (Nauka, Moscow, 1985) [in Russian].

2. Kh. I. Amirkhanov, R. I. Bashirov, and M. M. Gadzhialiev, Sov. Phys. Solid State 3, 2713 (1961).

3. I. L. Drichko and I. V. Mochan, Sov. Phys. Solid State 6, 1498 (1964).

4. S. M. Puri and T. H. Geballe, Phys. Rev. 136, 1767 (1964).

5. S. M. Puri, Phys. Rev. 139, 995 (1965).

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1. Thermoelectric power of n-InSb in a transverse quantizing magnetic field;Semiconductors;2015-07

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