Analysis of the Gas Phase Epitaxy of Silicon Carbide as a Basic Process for the Technology of Power Electronics-Reference-Cited by-同舟云学术

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Analysis of the Gas Phase Epitaxy of Silicon Carbide as a Basic Process for the Technology of Power Electronics

Published:2021-12-30 Issue: Volume: Page:
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Afanasev A. V.,Ilyin V. A.,Luchinin V. V.,Reshanov S. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1134/S1063782621130029.pdf

Reference24 articles.

1. V. V. Luchinin and Yu. M. Tairov, Izv. Vyssh. Uchebn. Zaved., Elektron., No. 6 (92), 3 (2011).

2. V. V. Luchinin, Nano- Mikrosist. Tekh. 18 (5), 259 (2016).

3. Y. M. Tairov and V. F. Tsvetkov, J. Cryst. Growth 43, 209 (1978).

4. A. O. Lebedev, D. D. Avrov, Yu. M. Tairov, and V. V. Luchinin, RF Patent No. 2633909 (2016).

5. D. D. Avrov, Yu. O. Bykov, S. V. Gladkii, et al., RF Patent No. 2671349 (2017).

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