Voltage oscillations in the case of the switching effect in thin layers of Ge–Sb–Te chalcogenides in the current mode-Reference-Cited by-同舟云学术

Voltage oscillations in the case of the switching effect in thin layers of Ge–Sb–Te chalcogenides in the current mode

Published:2016-07 Issue:7 Volume:50 Page:941-946
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Fefelov S. A.,Kazakova L. P.,Arsova D.,Kozyukhin S. A.,Tsendin K. D.,Prikhodko O. Yu.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782616070046.pdf

Reference10 articles.

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2. S. A. Fefelov, L. P. Kazakova, S. A. Yakovlev, S. A. Kozyukhin, and K. D. Tsendin, in Proceedings of the International Symposium on Physics of Interphase Boundaries and Phase Transitions MFGFP-1 (Rostovna-Donu, Russia, 2011), p. 155.

3. S. A. Fefelov, L. P. Kazakova, S. A. Kozyukhin, K. D. Tsendin, D. Arsova, and V. Pamukchieva, Tech. Phys. 59, 546 (2014).

4. N. Almasov, N. Bogoslovskiy, N. Korobova, S. Kozyukhin, S. Fefelov, L. Kazakova, S. Jakovlev, K. Tsendin, and N. Guseinov, J. Non-Cryst. Sol. 358, 3299 (2012).

5. V. Dzhurkov, S. Fefelov, D. Arsova, D. Nesheva, and L. Kazakova, J. Phys.: Conf. Ser. 558, 012046 (2014).

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