Effect of deviations from the stoichiometric composition on the electrical and photoelectrical properties of the Hg3In2Te6 compound-Reference-Cited by-同舟云学术

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Effect of deviations from the stoichiometric composition on the electrical and photoelectrical properties of the Hg3In2Te6 compound

Published:2014-10 Issue:10 Volume:48 Page:1271-1274
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Grushka O. G.,Savchuk A. I.,Chupyra S. M.,Mysliuk O. M.,Bilichuk S. V.,Shlemkevych V. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782614100091.pdf

Reference10 articles.

1. A. I. Malik, G. G. Grushka, and N. R. Tevs, Sov. Tech. Phys. 35, 723 (1990).

2. A. I. Malik and G. G. Grushka, Sov. Tech. Phys. 35, 1227 (1990).

3. L. N. Kurbatov, Optoelectronics of Visible and Infrared Spectral Ranges (Mosk. Fiz. Tekh. Inst., Moscow, 1999) [in Russian].

4. G. G. Grushka, Z. M. Grushka, and N. P. Gavaleshko, Ukr. Fiz. Zh. 30, 304 (1985).

5. P. N. Gorlei and O. G. Grushka, Semiconductors 37, 168 (2003).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impurity levels in Hg3In2Te6 crystals;Semiconductors;2017-08

2. Anomalous thermoelectric power in Hg3In2Te6 crystals;Semiconductors;2016-06

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