Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb-Reference-Cited by-同舟云学术

Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb

Published:2006-05 Issue:5 Volume:40 Page:503-520
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Voronina T. I.,Lagunova T. S.,Mikhaĭlova M. P.,Moiseev K. D.,Lipaev A. F.,Yakovlev Yu. P.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782606050022.pdf

Reference40 articles.

1. A. N. Baranov, A. N. Imenkov, V. V. Sherstnev, and Yu. P. Yakovlev, Appl. Phys. Lett. 64, 2480 (1994).

2. K. D. Moiseev, M. P. Mikhailova, B. I. Zhurtanov, et al., Appl. Surf. Sci. 252, 257 (1998).

3. K. D. Moiseev, M. P. Mikhaĭlova, O. G. Ershov, and Yu. P. Yakovlev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 30, 41 (1996) [Semiconductors 30, 21 (1996)].

4. T. S. Haserberg, R. H. Miles, and L. West, IEEE J. Quantum Electron. 33, 1403 (1997).

5. N. D. Stoyanov, M. P. Mikhaĭlova, O. V. Andreĭchuk, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 35, 467 (2001) [Semiconductors 35, 453 (2001)].

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