Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer-Reference-Cited by-同舟云学术

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Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer

Published:2016-01 Issue:1 Volume:50 Page:1-7
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Rykov A. V.,Dorokhin M. V.,Malysheva E. I.,Demina P. B.,Vikhrova O. V.,Zdoroveishev A. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1134/S106378261601019X/fulltext.html

Reference22 articles.

1. N. Dai, H. Luo, F. C. Zhang, N. Samarth, M. Dobrowolska, and J. K. Furdyna, Phys. Rev. Lett. 67, 3824 (1991).

2. I. A. Buyanova, G. Yu. Rudko, W. M. Chen, A. A. Toropov, S. V. Sorokin, S. V. Ivanov, and P. S. Kop’ev, Appl. Phys. Lett. 82, 1700 (2003).

3. R. C. Myers, A. C. Gossard, and D. D. Awschalom, Phys. Rev. B 69, 161305(R) (2004).

4. M. V. Dorokhin, Yu. A. Danilov, P. B. Demina, V. D. Kulakovskii, O. V. Vikhrova, S. V. Zaitsev, and B. N. Zvonkov, J. Phys. D: Appl. Phys. 41, 24 (2008).

5. V. L. Korenev, JETP Lett. 78, 564 (2003).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Long-Range Magnetic Interaction in InGaAs/GaAs/δ-〈Mn〉 Heterostructures;Technical Physics Letters;2020-01

2. Control of circular polarization of electroluminescence in spin light-emitting diodes based on InGaAs/GaAs/δ〈Mn〉 heterostructures;Physics of the Solid State;2017-11

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