TCAD Simulation Study of Single-, Double-, and Triple-Material Gate Engineered Trigate FinFETs-Reference-Cited by-同舟云学术

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TCAD Simulation Study of Single-, Double-, and Triple-Material Gate Engineered Trigate FinFETs

Published:2020-04 Issue:4 Volume:54 Page:501-505
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Vimala P.,Arun Samuel T. S.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1134/S1063782620040211.pdf

Reference13 articles.

1. A. Tsormpatzoglou, C. A. Dimitriadis, R. Clerc, G. Pananakakis, and G. Ghibaudo, IEEE Trans. Electron. Dev. 55, 2823 (2008).

2. P. Vimala and N. R. Nithin Kumar, J. Nano Res. 56, 19 (2019).

3. P. Vimala, J. Nano-Electron. Phys. 10, 05015 (2018).

4. P. K. Pal, B. K. Kaushik, and S. Dasgupta, IEEE Trans. Electron. Dev. 62, 1105 (2015).

5. C. Li, Y. Zhuang, and L. Zhang, in Proceedings of the IEEE International Conference EDSSC, Bangkok,2012.

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