The I–V characteristics of asymmetrically necked samples of high-resistivity silicon-Reference-Cited by-同舟云学术

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The I–V characteristics of asymmetrically necked samples of high-resistivity silicon

Published:2011-03 Issue:3 Volume:45 Page:284-287
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Ašmontas S.,Kleiza V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782611030031.pdf

Reference10 articles.

1. S. Ašmontas, Yu. Požela, and K. Repshas, Lit. Fiz. Sb. 11(2), 243 (1971).

2. S. Ašmontas, Yu. Požela, and K. Repshas, Lit. Fiz. Sb. 15(2), 249 (1975).

3. S. Ašmontas, Phys. Status Solidi A 31, 409 (1975).

4. S. Ašmontas, Yu. Požela, and K. Repshas, Diploma No. 185, Byull. Izobret. No. 39, 1 (1977).

5. S. Ašmontas and A. Sužiedėlis, Int. J. Infrared Millimeter Waves 15, 525 (1994).

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