The Effect of Ionizing Irradiation on the Charge Distribution and Breakdown of MOSFETs-Reference-Cited by-同舟云学术

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The Effect of Ionizing Irradiation on the Charge Distribution and Breakdown of MOSFETs

Published:2022-03 Issue:3 Volume:56 Page:160-163
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Aleksandrov O. V.,Tyapkin N. S.,Mokrushina S. A.,Fomin V. N.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1134/S1063782622020038.pdf

Reference9 articles.

1. K. I. Tapero, V. N. Ulimov, and A. M. Chlenov, Radiation Effects in Silicon Integrated Circuits for Space Applications (BINOM, Labor. Znanii, Moscow, 2012) [in Russian].

2. T. R. Oldham, IEEE Trans. Nucl. Sci. 50, 483 (2003).

3. V. S. Pershenkov, V. D. Popov, and A. V. Shal’nov, Surface Radiation Effects in ICs (Energoatomizdat, Moscow, 1988) [in Russian].

4. F. P. Korshunov, Yu. V. Bogatyrev, and V. A. Vavilov, Effects of Radiation on Integrated Circuits (Nauka Tekhnika, Minsk, 1986) [in Russian].

5. D. M. Fleetwood, Appl. Phys. Lett. 55, 466 (1989).

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