Cathodoluminescence and TEM studies of HVPE GaN layers grown on porous SiC substrates-Reference-Cited by-同舟云学术

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Cathodoluminescence and TEM studies of HVPE GaN layers grown on porous SiC substrates

Published:2007-04 Issue:4 Volume:41 Page:387-390
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Kolesnikova E.,Mynbaeva M.,Sitnikova A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782607040045.pdf

Reference10 articles.

1. F. Yun, S. Doğan, Y. T. Moon, et al., Phys. Status Solidi C 2, 2087 (2005).

2. A. Sagar, C. D. Lee, R. Feenstra, et al., J. Vac. Sci. Technol. B 21, 1812 (2003).

3. C. K. Inoki, T. S. Kuan, C. D. Lee, et al., J. Electron. Mater. 32, 855 (2003).

4. M. G. Mynbaeva, O. V. Konstantinov, K. D. Mynbaev, et al., Pis’ma Zh. Tekh. Fiz. 32(23), 25 (2006) [Tech. Phys. Lett. 32, 1011 (2006)].

5. K. D. Mynbaev, M. G. Mynbaeva, A. S. Zubrilov, and N. A. Seredova, Pis’ma Zh. Tekh. Fiz. 33(2), 74 (2007) [Tech. Phys. Lett. 33, 83 (2007)].

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of annealing porous templates in an ammonia atmosphere on gallium nitride growth behaviors in hydride vapor phase epitaxy;Materials Science in Semiconductor Processing;2014-11

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