Abstract
The results of complex studies of static and dynamic performance of 1550 nm range VCSELs, which were created by direct bonding (wafer fusion technique) InAlGaAs/InP optical cavity wafers with AlGaAs/GaAs distributed Bragg reflector wafers grown by molecular beam epitaxy, are presented. The VCSELs with a buried tunnel junction diameter less than 7 μm demonstrated a single-mode lasing with a side-mode suppression ratio more than 40 dB; however, at diameters less than 5 μm, a sharp increase in the threshold current is observed. It is associated to the appearance of a saturable absorber due to penetration of optical mode into the non-pumped regions of the active region. The maximum single-mode output optical power and the –3 dB modulation bandwidth reached 4.5 mW and 8 GHz, respectively, at 20°C. The maximum data rate at 20°C under non-return-to-zero on-off keying modulation was 23 Gb/s for a short-reach link based on single-mode fiber SMF-28. As the length of the optical link increased up to 2000 m, the maximum data rate dropped to 18 Gbit/s. The main factors affecting the high-speed operation and data transmission range are defined and discussed, and the further ways to overcome themit are proposed.
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Funding
The study has been performed by a group of authors from ITMO University and financed by the program “Priority 2030” in terms of studies of the number of the dynamic characteristics, as well as with the support of the Ministry of Science and Higher Education of the Russian Federation, the research project no. 2019–1442 in terms of a number of studies of the static characteristics.
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Blokhin, S.A., Babichev, A.V., Karachinsky, L.Y. et al. 1550 nm Range High-Speed Single-Mode Vertical-Cavity Surface-Emitting Lasers. Semiconductors 57, 221–230 (2023). https://doi.org/10.1134/S1063782623070072
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DOI: https://doi.org/10.1134/S1063782623070072