On the theory of the photoelectric effect in surface-graded-gap semiconductors-Reference-Cited by-同舟云学术

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On the theory of the photoelectric effect in surface-graded-gap semiconductors

Published:2013-01 Issue:1 Volume:47 Page:66-72
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Kholodnov V. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782613010156.pdf

Reference27 articles.

1. Zh. I. Alferov, Usp. Fiz. Nauk 172, 1072 (2002).

2. A. Kramer, Usp. Fiz. Nauk 172, 1087 (2002).

3. A. M. Vasil’ev and A. P. Landsman, Semiconductor Photoconverters (Sov. Radio, Moscow, 1971), Ch. 2, pt. 4, p. 36; pt. 6, p. 46 [in Russian].

4. V. I. Il’in, S. F. Musikhin, and A. Ya. Shik, Semiconductors with Graded Band-Gap and Heterostructures (Nauka, St.-Petersburg, 2000), Ch. 1, pts. 1.1–1.4; Ch. 4, pt. 4.1 [in Russian].

5. G. V. Tsarenkov, Sov. Phys. Semicond. 9, 166 (1975).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the possibility of using recursive trigonometric functions to calculate the distribution of nonequilibrium minority charge carriers in a two-layer semiconductor material;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2015-09

2. Surface-barrier photoconverters with graded-gap layers in the space-charge region;Semiconductors;2015-04

3. Photoelectric converters with graded-gap layers based on ZnSe;Semiconductors;2013-10

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