Giant burst of impact ionization in a p-n junction of the 6H-SiC polytype-Reference-Cited by-同舟云学术

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Giant burst of impact ionization in a p-n junction of the 6H-SiC polytype

Published:2008-12 Issue:12 Volume:42 Page:1408-1412
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Sankin V. I.,Shkrebiy P. P.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782608120063.pdf

Reference9 articles.

1. G. N. Wannier, Phys. Rev. 11, 432 (1960).

2. A. P. Dmitriev, A. O. Konstantinov, D. P. Litvin, and V. I. Sankin, Fiz. Tekh. Poluprovodn. 17, 1093 (1983) [Sov. Phys. Semicond. 17, 686 (1983)].

3. Yu. A. Vodakov, D. P. Litvin, V. I. Sankin, et al., Fiz. Tekh. Poluprovodn. 19, 814 (1985) [Sov. Phys. Semicond. 19, 502 (1985)].

4. V. I. Sankin, Mater. Sci. Forum 457–460, 701 (2004).

5. V. I. Sankin, Fiz. Tekh. Poluprovodn. 36, 769 (2002) [Semiconductors 36, 717 (2002)].

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Charge transport in 4H-SiC detector structures under conditions of a high electric field;Semiconductors;2009-08

2. Observation of impact ionization in 4H-SiC radiation detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2009-07

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