Differential capacitance of a p +-p junction-Reference-Cited by-同舟云学术

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Differential capacitance of a p +-p junction

Published:2012-01 Issue:1 Volume:46 Page:56-66
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Shekhovtsov N. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782612010174.pdf

Reference21 articles.

1. N. A. Shekhovtsov, Semiconductors 43(4), 436 (2009).

2. J. B. Gunn, J. Electron. Control 4(1), 17 (1958).

3. Z. T. Kuzniki, Electron. Technol. 12(2), 15 (1979).

4. Z. T. Kuzniki, Electron. Technol. 12(3), 89 (1979).

5. L. I. Baranov, V. B. Gamanyuk, and D. A. Usanov, in Physics of Semiconductors and Semiconductor Electronics (Sarat. Univ., Saratov, 1970), vol. 3, p. 8 [in Russian].

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. CALCULATION OF STATIC PARAMETERS OF SILICON DIODE CONTAINING δ-LAYER OF TRIPLE-CHARGED POINT DEFECTS IN SYMMETRIC p–n-JUNCTION;Devices and Methods of Measurements;2018-06-15

2. Voltage dependence of the differential capacitance of a p +-n junction;Semiconductors;2013-04

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