Vacancy model of micropipe annihilation in epitaxial silicon carbide layers-Reference-Cited by-同舟云学术

Vacancy model of micropipe annihilation in epitaxial silicon carbide layers

Published:2011-06 Issue:6 Volume:45 Page:727-730
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Davydov S. Yu.,Lebedev A. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S106378261106008X.pdf

Reference8 articles.

1. M. G. Mynbaeva, P. L. Abramov, A. A. Lebedev, A. S. Tregubov, D. P. Litvin, A. V. Vasiliev, T. Yu. Chemekova, and Yu. N. Makarov, Fiz. Tekh. Poluprovodn. 45, 847 (2011).

2. A. A. Lebedev and S. Yu. Davydov, Fiz. Tekh. Poluprovodn. 39, 296 (2005) [Semiconductors 39, 277 (2005)].

3. S. Yu. Davydov and A. A. Lebedev, Fiz. Tekh. Poluprovodn. 41, 641 (2007) [Semiconductors 41, 621 (2007)].

4. A. A. Lebedev, Fiz. Tekh. Poluprovodn. 33, 769 (1999) [Semiconductors 33, 707 (1999)].

5. N. S. Savkina, A. A. Lebedev, A. S. Tregubova, and M. P. Scheglov, Mater. Sci. Forum 338–342, 509 (2000).

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