Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density-Reference-Cited by-同舟云学术

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Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density

Published:2013-09 Issue:9 Volume:47 Page:1180-1184
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Sachenko A. V.,Belyaev A. E.,Boltovets N. S.,Zhilyaev Yu. V.,Kapitanchuk L. M.,Klad’ko V. P.,Konakova R. V.,Kudryk Ya. Ya.,Naumov A. V.,Panteleev V. N.,Sheremet V. N.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782613090212.pdf

Reference24 articles.

1. H. Morkoc, Handbook of Nitride Semiconductors and Devices (Wiley-VCH, Weinheim, 2008).

2. F. E. Shubert, Light-Emitting Diodes (Cambridge Univ. Press, 2006).

3. Yu. G. Shreter, Yu. T. Rebane, V. A. Zykov, and V.G. Sidorov, Wide-Gap Semiconductors (Nauka, St.-Petersburg, 2001) [in Russian].

4. R. Quay, Gallium Nitride Electronics (Springer, Berlin, Heidelberg, 2008).

5. A. G. Vasil’ev, Yu. V. Kolkovskii, and Yu. A. Kontsevoi, Microwave Wide-Gap Semiconductor Transistors (Tekhnosfera, Moscow, 2011) [in Russian].

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN;Semiconductor Physics Quantum Electronics and Optoelectronics;2013-09-30

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