Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons-Reference-Cited by-同舟云学术

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Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons

Published:2017-11 Issue:11 Volume:51 Page:1466-1471
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Zabavichev I. Yu.,Potekhin A. A.,Puzanov A. S.,Obolenskiy S. V.,Kozlov V. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1134/S106378261711029X/fulltext.html

Reference17 articles.

1. G. H. Kinchin and R. S. Pease, Usp. Fiz. Nauk 60, 590 (1956).

2. J. Slater, Usp. Fiz. Nauk 47, 51 (1952).

3. K. Lark-Horovitz, Usp. Fiz. Nauk 50, 51 (1953).

4. J. Glen, Usp. Fiz. Nauk 60, 445 (1956).

5. L. J. Cheng and J. Lori, Phys. Rev. 171, 856 (1968).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of the Potential of Scattering at Radiation-Induced Defects on Carrier Transport in GaAs Structures;Semiconductors;2020-09

2. Simulation of the Formation of a Cascade of Displacements and Transient Ionization Processes in Silicon Semiconductor Structures under Neutron Exposure;Semiconductors;2019-09

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