Experimental determination of the constants of absolute volume deformation potentials at band edges in semiconductors-Reference-Cited by-同舟云学术

Experimental determination of the constants of absolute volume deformation potentials at band edges in semiconductors

Published:2004-10 Issue:10 Volume:46 Page:1825-1829
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Daunov M. I.,Kamilov I. K.,Gabibov S. F.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1809413.pdf

Reference34 articles.

1. K. Kosaka and K. Takarabe, Phys. Status Solidi B 235(2), 423 (2003).

2. P. Y. Yu and M. Cardona, Fundamentals of Semiconductors (Springer, Berlin, 1996; Fizmatlit, Moscow, 2002).

3. M. I. Daunov, I. K. Kamilov, and S. F. Gabibov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 35(1), 58 (2001) [Semiconductors 35, 59 (2001)].

4. M. I. Daunov, I. K. Kamilov, S. F. Gabibov, and R. Rh. Akchurin, Phys. Status Solidi B 223(1–2), 529 (2001).

5. M. I. Daunov, I. K. Kamilov, R. K. Arslanov, S. F. Gabibov, and D. M. Daunova, in Abstracts of XXXIX European High-Pressure Research Group Meeting (Spain, 2001), p. 34.

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