Determination of the parameters of deep levels from the relaxational delay of breakdown of a p-n junction-Reference-Cited by-同舟云学术

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Determination of the parameters of deep levels from the relaxational delay of breakdown of a p-n junction

Published:1999-04 Issue:4 Volume:33 Page:473-476
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Bulyarskii S. V.,Serëzhkin Yu. N.,Ionychev V. K.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187898.pdf

Reference7 articles.

1. I. V. Grekhov and Yu. N. Serezhkin, Avalanche Breakdowns of p-n Junctions in Semiconductors [in Russian], Énergiya, Leningrad, 1980.

2. P. V. Akimov, I. V. Grekhov, and Yu. N. Serezhkin, Fiz. Tekh. Poluprovodn. 4, 2099 (1970) [Sov. Phys. Semicond. 4, 1802 (1970)].

3. E. V. Astrova, V. M. Volle, V. B. Voronkov, V. A. Kozlov, and A. A. Lebedev, Fiz. Tekh. Poluprovodn. 20, 2122 (1986) [Sov. Phys. Semicond. 20, 1326 (1986)].

4. Yu. V. Vyzhigin, B. N. Gresserov, and N. A. Sobolev, Fiz. Tekh. Poluprovodn. 22, 536 (1988) [Sov. Phys. Semicond. 22, 330 (1988)].

5. A. S. Kyuregyan and P. N. Shlygin, Fiz. Tekh. Poluprovodn. 23, 1164 (1989) [Sov. Phys. Semicond. 23, 729 (1989)].

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