Electrical activity of dislocations and point defects of deformation origin in CdxHg1−x Te crystals-Reference-Cited by-同舟云学术

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Electrical activity of dislocations and point defects of deformation origin in CdxHg1−x Te crystals

Published:2003-01 Issue:1 Volume:37 Page:6-14
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Gasan-zade S. G.,Staryi S. V.,Strikha M. V.,Shepel’skii G. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1538531.pdf

Reference20 articles.

1. P. I. Baranskii, Yu. N. Gavrilyuk, A. I. Elizarov, and V. A. Kulik, Fiz. Tekh. Poluprovodn. (Leningrad) 11, 1560 (1977) [Sov. Phys. Semicond. 11, 916 (1977)].

2. S. G. Gasan-zade, E. A. Sal’kov, and G. A. Shepel’skii, Fiz. Tekh. Poluprovodn. (Leningrad) 17, 1913 (1983) [Sov. Phys. Semicond. 17, 1225 (1983)].

3. J. H. Tregigals, T. L. Polgreen, and M. C. Chen, J. Cryst. Growth 88, 460 (1988).

4. S. G. Gasan-zade, I. P. Zhad’ko, É. A. Zinchenko, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 23, 85 (1989) [Sov. Phys. Semicond. 23, 52 (1989)].

5. B. Pelliciari and G. Beret, J. Appl. Phys. 62, 3986 (1987).

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1. CdTe as a passivating layer in CdTe/HgCdTe heterostructures;Semiconductors;2008-07

2. Magnetic-field dependences of the conductivity and hall factor in MBE-grown CdXHg1−X Te layers;Semiconductors;2004-10

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