1. Kuznetsov, N.V. and Panasyuk, M.I., Vopr. At. Nauki Tekh., 2001, no. 1–2, p. 3.
2. Gul’ko, O.E., Vopr. At. Nauki Tekh., Ser. Fiz., 2005, nos. 1–2, p. 80.
3. Zebrev, G.I., Modeling of dose and single radiation effects in silicon micro- and nanoelectronic structures for design and prediction chains, Doctoral (Eng.) Dissertation, Moscow: Moscow Engineering Physics Inst., 2009.
4. Luk’’yashchenko, V.I. et al., Vopr. At. Nauki Tekh., Ser. Fiz., 2001, nos. 3–4, p. 81.
5. Tsaplin, S.V., Tyulevin, S.V., Piganov, M.N., and Bolychev, S.A., Issledovanie svoistv radioelektronnykh elementov pri vozdeistvii ionizatsionnogo potoka: Uchebnoe posobie. (Investigation of the Properties of Electronics Elements Exposed to Ionization Flux: A Handbook), Samara, Samarskii Univ., 2018, vol. 180.