Electrical properties of metal-dysprosium oxide-gadolinium oxide-silicon structures-Reference-Cited by-同舟云学术

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Electrical properties of metal-dysprosium oxide-gadolinium oxide-silicon structures

Published:2004-06 Issue:6 Volume:30 Page:494-496
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Rozhkov V. A.,Rodionov M. A.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/1.1773347.pdf

Reference7 articles.

1. V. A. Rozhkov, A. Yu. Trusova, I. G. Berezhnoi, and V. G. Goncharov, Zh. Tekh. Fiz. 65(8), 183 (1995) [Tech. Phys. 40, 849 (1995)].

2. U. Guttierets, Zarubezhn. Radioélektron., No. 1, 86 (1966).

3. V. A. Rozhkov and A. I. Petrov, Pis’ma Zh. Tekh. Fiz. 11(1), 49 (1985) [Sov. Tech. Phys. Lett. 11, 21 (1985)].

4. Yu. A. Anoshin, A. I. Petrov, V. A. Rozhkov, et al., Pis’ma Zh. Tekh. Fiz. 18(10), 54 (1992) [Sov. Tech. Phys. Lett. 18, 321 (1992)].

5. A. Goetzberger, Bell Syst. Tech. J. 45, 1097 (1966).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrate;Semiconductor Physics, Quantum Electronics and Optoelectronics;2018-12-03

2. Rare-earth oxide thin films for gate dielectrics in microelectronics;Journal of Alloys and Compounds;2006-07

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