1. Y. Sugawara, D. Takayama, K. Asano, R. Singh, J. Palmour, and T. Hayashi, Proceedings of the 13th Intern. Symp. on Power Semiconductor Devices and Intgegrated Circuits (Osaka, Japan, 2001), pp. 27–30.
2. M. Levinstein, P. Ivanov, M. Boltovets, V. Krivutsa, J. Palmour, M. Das, and B. Hull, Mater. Sci. Forum 527–529, 1339 (2006).
3. M. Levinshtein, S. Rumyantsev, T. Mnatsakanov, A. Agarwal, and J. Palmour, SiC Thyristors, in SiC Materials and Devices (World Scientific Publ., Singapore, 2006).
4. A. Galeckas, A. Hallén, S. Majdi, J. Linnros, and P. Pirouz, Phys. Rev. B 74, 233 203 (2006).
5. B. Gossik, J. Appl. Phys. 27, 905 (1956).