Modification of the structure and hydrogen content of amorphous hydrogenated silicon films under conditions of femtosecond laser-induced crystallization-Reference-Cited by-同舟云学术

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Modification of the structure and hydrogen content of amorphous hydrogenated silicon films under conditions of femtosecond laser-induced crystallization

Published:2014-02 Issue:2 Volume:40 Page:141-144
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Emelyanov A. V.,Kazanskii A. G.,Kashkarov P. K.,Konkov O. I.,Kutuzov N. P.,Lyaskovskii V. L.,Forsh P. A.,Khenkin M. V.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/S1063785014020217.pdf

Reference16 articles.

1. S. Guha, J. Yang, D. L. Williaamson, et al., Appl. Phys. Lett. 74, 1860 (1999).

2. J. Y. Ahn, K. H. Jun, K. S. Lim, and M. Konagai, Appl. Phys. Lett. 82, 1718 (2003).

3. A. G. Kazanskii, E. I. Terukov, P. A. Forsh, and J. P. Kleider, Semiconductors 44, 494 (2010).

4. A. G. Kazanskii, Kh. Mell, E. I. Terukov, and P. A. Forsh, Semiconductors 36, 36 (2002).

5. C. R. Wronski and R. W. Collins, Solar Energy 77, 877 (2004).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Doping on the Properties of Hydrogenated Amorphous Silicon Irradiated with Femtosecond Laser Pulses;Physics of the Solid State;2018-04

2. Femtosecond laser pulse modification of amorphous silicon films: control of surface anisotropy;Laser Physics Letters;2018-03-26

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