Determining the energies of deep centers in heterostructures based on InGaN Solid solutions-Reference-Cited by-同舟云学术

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Determining the energies of deep centers in heterostructures based on InGaN Solid solutions

Published:2006-02 Issue:2 Volume:32 Page:146-148
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Ambrozevich A. S.,Ambrozevich S. A.,Grushko N. S.,Potanakhina L. N.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/S1063785006020180.pdf

Reference7 articles.

1. N. I. Kuznetsov and K. G. Irvine, Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 369 (1998) [Semiconductors 32, 335 (1998)].

2. V. Yu. Nekrasov, L. V. Belyakov, O. M. Sreseli, and N. N. Zinov’ev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 1428 (1999) [Semiconductors 33, 1284 (1999)].

3. A. N. Georgobiani, A. N. Gruzintsev, M. O. Vorob’ev, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 35, 725 (2001) [Semiconductors 35, 695 (2001)].

4. S. S. Mamakin, A. E. Yunovich, A. B. Wattana, and F. I. Manyakhin, Fiz. Tekh. Poluprovodn. (St. Petersburg) 37, 1131 (2003) [Semiconductors 37, 1107 (2003)].

5. S. V. Bulyarskiĭ and N. S. Grushko, Generation-Recombination Processes in Active Elements (Izd. MGU, Moscow, 1995) [in Russian].

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