Lasers Based on Quantum Well-Dots Emitting in the 980- and 1080-nm Optical Ranges-Reference-Cited by-同舟云学术

Lasers Based on Quantum Well-Dots Emitting in the 980- and 1080-nm Optical Ranges

Published:2019-02 Issue:2 Volume:45 Page:163-166
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Nadtochiy A. M.,Mintairov S. A.,Kalyuzhnyy N. A.,Shernyakov Yu. M.,Kornyshov G. O.,Serin A. A.,Payusov A. S.,Nevedomsky V. N.,Gordeev N. Yu.,Maximov M. V.,Zhukov A. E.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/S1063785019020305.pdf

Reference10 articles.

1. S. A. Mintairov, N. A. Kalyuzhnyy, V. M. Lantrantov, M. V. Maximov, A. M. Nadtochiy, S. Rouvimov, and A. E. Zhukov, Nanotechnology 26, 385202 (2015). http://dx.doi.org/ https://doi.org/10.1088/0957-4484/26/38/385202

2. A. M. Nadtochiy, S. A. Mintairov, N. A. Kalyuzhnyy, S. C. Rouvimov, Yu. M. Shernyakov, A. C. Payusov, M. V. Maximov, and A. E. Zhukov, Semiconductors 49, 1090 (2015).

3. M. Sugiyama, H. Fujii, T. Katoh, K. Toprasertpong, H. Sodabanlu, K. Watanabe, D. Alonso-Alvarez, N. J. Ekins-Daukes, and Y. Nakano, Prog. Photovolt.: Res. Appl. 24, 1606 (2016). https://doi.org/10.1002/pip.2769

4. N. N. Ledentsov, D. Bimberg, Yu. M. Shernyakov, V. Kochnev, M. V. Maximov, A. V. Sakharov, I. L. Krestnikov, A. Yu. Egorov, A. E. Zhukov, A. F. Tsa-tsul’nikov, B. V. Volovik, V.M. Ustinov, P. S. Kop’ev, Zh. I. Alferov, A. O. Kosogov, and P. Werner, Appl. Phys. Lett. 70, 2888 (1997).

5. A. M. Nadtochiy, M. V. Maximov, S. A. Mintairov, N. A. Kalyuzhnyy, V. N. Nevedomskiy, S. S. Rouvimov, and A. E. Zhukov, Phys. Status Solidi B 255, 1800123 (2018). https://doi.org/10.1002/pssb.201800123

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Relationship between Wavelength and Gain in Lasers Based on Quantum Wells, Dots, and Well-Dots;Semiconductors;2023-12

2. High-power 0.98 µm range diode lasers based on InGaAs/GaAs quantum well-dot active region;Journal of Physics: Conference Series;2019-11-01